An 80-W packaged GaN high power amplifier for CW operation in the 13.75–14.5 GHz band

Abstract

A high power internally matched GaN-HEMT amplifier at Ku-Band was successfully developed. In order to achieve high output power over the targeted bandwidth, a new balancing network is added to the gate side matching circuit. At 24 V drain supply voltage, the HPA delivers 80W of CW RF power with a PAE exceeding 22% over the 13.75-14.5 GHz frequency range. To the best of authors' knowledge, this output power is state-of-the-art for CW operation in this frequency band.