Low threshold ion-implanted Nd:YAG channel waveguide laser

Abstract

The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as ~500 μW in good agreement with theoretical expectation. Output slope efficiencies of ~29% have also been demonstrated.