Growth Direction and Cross‐Sectional Study of Silicon Nanowires

Abstract

Cross‐sectional samples of silicon nanowires (SiNWs) are examined using transmission electron microscopy. The cross‐sections are bounded by well‐defined low‐index crystallographic facets of various shapes (e.g., the square section in the Figure, 50 nm edge) and characterized by shape‐dependent growth directions, with 〈112〉 and 〈110〉 predominating. Both shape and growth direction are consistent with surface energy considerations and growth mechanisms.