Substantiation of subplantation model for diamondlike film growth by atomic force microscopy

Abstract

Atomic force microscopy studies of films deposited from ${\mathrm{C}}^{+}$ ions are reported. For ${\mathit{C}}^{+}$ energies E\ensuremath{\ge}30 eV the films are diamondlike and retain the initial smoothness of the silicon substrate. For E30 eV graphitic films evolve with the surface roughness increasing with decreasing ${\mathrm{C}}^{+}$ energy. It was further found that for 120 eV ${\mathrm{C}}^{+}$ deposition, at substrate temperatures ${\mathit{T}}_{\mathit{s}}$150 \ifmmode^\circ\else\textdegree\fi{}C diamondlike, smooth films are deposited, while for ${\mathit{T}}_{\mathit{s}}$>150 \ifmmode^\circ\else\textdegree\fi{}C graphitic, rough films are produced. The results substantiate the subplantation model, manifesting the role of subsurface internal growth in diamondlike film formation.