Graded bandgap structure for PbS/CdS/ZnS quantum-dot-sensitized solar cells with a PbxCd1−xS interlayer

Abstract

To suppress the electron-hole recombination in the multishell sensitizer for quantum-dot-sensitized solar cells (QDSCs), the PbxCd1−xS interlayer is incorporated between the PbS core and CdS shell. The PbS/PbxCd1−xS/CdS structure enhances the cell efficiency by ∼60% compared to PbS/CdS QDSCs, and consequently shows a power-conversion efficiency of 1.37% with ZnS coating. Open-circuit voltage decay confirmed that the PbxCd1−xS interlayer effectively reduces the recombination at the PbS/CdS interface. Furthermore, with respect to the peak shift of incident photon-to-current conversion efficiency, the interlayer also increases the light-harvesting efficiency in the higher-wavelength region by reducing the exciton confinement within the PbS sensitizer.