Modified Stranski–Krastanov growth in stacked layers of self-assembled islands

Abstract

In a stack of vertically aligned Stranski–Krastanov grown islands, the critical thickness for planar growth for all but the initial dot layer is reduced, if the thickness of the spacer layer ts is smaller than a certain value t0. We present structural and photoluminescence results on the basis of the extensively studied lattice-mismatched material system Si/Ge.