Photoluminescence of Nd-doped SnO2 thin films

Abstract

Structural, optical, and electrical properties of Nd-doped SnOx thin films are reported. The atomic structure was characterized by x-ray diffraction and infrared absorption spectrometry. Investigation of the photoluminescence properties revealed Nd-related bands at 920 and 1100 nm for samples annealed at 700 °C, which present the tetragonal structure of the SnO2 rutile phase. Nd3+ ions can be indirectly excited and no concentration quenching was observed up to 3 at. %. It is concluded that Nd3+ ions are efficient optically active dopants in addition to be responsible of the observed electric conductivity improvement. These materials are then interesting for solar cell applications.