Resistivity of boron doped diamond

Abstract

Abstract In this Letter, we present a significant advance in boron‐doped diamond material synthesis, with film resistivities reduced by almost two orders of magnitude with respect to the reference data of the field for boron concentrations in the range from 1 × 10 18 to 3 × 10 19 cm –3 . The study is conducted on a series of boron‐doped diamond homoepitaxial layers grown using the microwave plasma assisted vapour phase epitaxy. The electrical properties were obtained from Hall effect measurements and conductivity data probed in the van der Paw configuration at room temperature. This work highlights the important progress made on diamond material synthesis over the last decade, with significant advances in the reduction of compensation effects. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)