Room Temperature Electrostatic Across the Interface in Nanostructured ZnO/La $_{0.7}$Sr$_{0.3}$ MnO$_{3}$/SNTO Heterostructure

Abstract

PLD grown ZnO/La <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> Sr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> MnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /SrTi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.998</sub> Nb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.002</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> nanostructured heterostructure has been studied for its nanoelectronic properties at room temperature under zero applied field. XRD φ-scan reveals the epitaxial growth of La <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> Sr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> MnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (LSMO) film, while the transport of 10-nm LSMO manganite layer can be tuned with applied electric field using various field effect configurations. 10-nm LSMO layer shows a large change in resistance with the application of voltage, i.e., exhibiting colossal electroresistance (CER) ~100% (negative) and large positive electroresistance (ER) ~2683% under 4.5 V at room temperature. The variation scenario in 10-nm LSMO transport has been discussed on the basis of electric-field-induced modifications in the charge carrier density and electronic states.