A new magnetic semiconductor Cd1−x MnxGeP2

Abstract

A new semiconductor material, which comprises a solid solution of a ternary diamond-like semiconductor and transition element Mn, was grown and investigated. According to X-ray diffraction data, the crystal structure of the material is similar to that of the CdGeP2 host substance with a chalcopyrite-type crystal structure. The interplanar distances and the unit cell parameter decrease with an increase in Mn content: a=5.741 Å → 5.710 Å → 5.695 Å in the series of CdGeP2 → Cd1−x MnxGeP2 → Cd1−y MnyGeP2 compounds (x<y). The surface composition and in-depth concentration profiles for elements of a Cd-Mn-Ge-P quaternary system were investigated using electron microscopy and energy dispersive X-ray spectroscopy. The molecular concentration ratio for Mn and Cd at a depth of 0.4 µm is Mn/Cd=0.2.