Lattice strain relaxation at the initial stages of heteroepitaxy of GaAs on (100)Si by molecular beam epitaxy - Concepedia

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Lattice strain relaxation at the initial stages of heteroepitaxy of GaAs on (100)Si by molecular beam epitaxy

19

Citations

10

References

1989

Year

Takafumi Yao, Hiroshi Nakao, Hitoshi Kawanami, Ryuichi Toba

Journal of Crystal Growth

Lattice Strain RelaxationPhysicsApplied PhysicsInitial StagesSemiconductor MaterialMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor

References

	Year	Citations

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