Publication | Closed Access
Effects of tunneling on high-efficiency IMPATT avalanche diodes
17
Citations
3
References
1975
Year
High Low-doping ProfileElectrical EngineeringEngineeringNanoelectronicsElectronic EngineeringApplied PhysicsTunnel InjectionPower Semiconductor DeviceExperimental StudyMicroelectronicsOptoelectronicsSemiconductor Device
A theoretical and experimental study is presented of the effects of tunnel injection on high-efficiency IMPATT avalanche diodes characterized by a high low-doping profile. Some characteristics usually observed in such high-efficiency IMPATT oscillators are explained, taking into account the effects of tunneling.
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