Microwave measurements of the pulsed photoconductivity and photoelectric effect

Abstract

A method of pulsed measurements of microwave conductivity and photoelectric effect in a range of 36 GHz is described. This method ensures contactless measurements of the electrical properties of semi-conductors and studies of the kinetics of electron-ion processes with the participation of free current carriers and carriers localized in traps, resulting in data on lifetimes and mobilities of carriers in the nano- and micro-second ranges. The time resolution of the recording system is 5 ns. The method is based on the recording of the kinetics of changes in the resonator quality factor and the shift of the resonance frequency caused by a light-stimulated change in the complex permittivity. The results of measuring the temperature dependences of the microwave photoconductivity in a p -type CdTe sample doped with 0.25 mol % Ag 2 Te and a CdSe sample are presented.