Influence of Barrier and Doping Type on the Open-Circuit Voltage of Liquid Phase-Crystallized Silicon Thin-Film Solar Cells on Glass

Abstract

We investigate the influence of the barrier type and the absorber doping on the open-circuit voltage of liquid phase-crystallized silicon solar cells on glass. It was found that the use of n-type instead of p-type substrates is the major reason for the recently reported boost of the open-circuit voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</sub> ) up to values of 656 mV, which is by far exceeding the previously reported V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</sub> values of crystalline silicon solar cells on glass. Despite the high doping, locally, an internal quantum efficiency of 90% can be achieved. Therewith, efficiencies of 16% and up should be possible.