Concepedia

TLDR

Inkjet‑printed high‑speed polymeric complementary circuits are fabricated using n‑type P(NDI2OD‑T2) and p‑type P3HT and P2100 polymers. The study aims to increase printable organic circuit operating frequencies beyond 10 MHz by optimizing device architecture and semiconductor processing. Optimized TG/BC OFETs achieved balanced electron and hole mobilities of 0.2–0.5 cm²/Vs, enabling complementary inverters with gain > 30 and ring oscillators operating at ~50 kHz. © 2010 Wiley Periodicals, Inc., J Polym Sci Part B: Polym Phys, 2010.

Abstract

Abstract Inkjet‐printed high speed polymeric complementary circuits are fabricated using an n‐type ([poly{[ N,N ′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐dithiophene)} [P(NDI2OD‐T2), Polyera ActivInk N2200] and two p‐type polymers [poly(3‐hexylthiophene) (P3HT) and a dithiophene‐based polymer (Polyera ActivInk P2100)]. The top‐gate/bottom‐contact (TG/BC) organic field‐effect transistors (OFETs) exhibit well‐balanced and very‐high hole and electron mobilities (μ FET ) of 0.2–0.5 cm 2 /Vs, which were enabled by optimization of the inkjet‐printed active features, small contact resistance both of electron and hole injections, and effective control over gate dielectrics and its orthogonal solvent effect (selection of poly(methyl methacrylate) and 2‐ethoxyethanol). Our first demonstrated inkjet‐printed polymeric complementary devices have been integrated to high‐performance complementary inverters (gain >30) and ring oscillators (oscillation frequency ∼50 kHz). We believe that the operating frequency of printable organic circuits can be further improved more than 10 MHz by fine‐tuning of the device architecture and optimization of the p‐ and n‐channel semiconductor processing. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2010

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