Scalable embedded Ge-junction vertical-channel tunneling field-effect transistor for low-voltage operation

Abstract

While a tunneling field-effect transistor (TFET) is an attractive candidate for sub-20 nm ultra-low-power device, high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> and on-current are rarely reported with the deep-submicron structures. In this study, we propose a practical novel TFET structure with vertical channel and Ge junction, which shows high current ratio, low subthreshold swing and relatively high current even when the minimum device dimension is smaller than 20 nm. To find the optimum design, the off-state injection of a short-channel TFET and optimization of the source-side junction are studied by simulation.