Effect of Si doping on electrical and optical properties of ZnO thin films grown by sequential pulsed laser deposition

Abstract

The sequential pulsed laser deposition technique was used to grow highly transparent and c-axis oriented thin films of Si doped ZnO on sapphire substrates. On doping with Si, the resistivity of the virgin ZnO thin films was found to decrease from ∼3.0 × 10−2 to 6.2 × 10−4 Ω cm and its bandgap increased from about 3.28 to 3.44 eV at different doping concentrations. XPES measurements revealed that Si predominantly occupies the Zn lattice sites in the Si+3 state. The increase in the bandgap of the ZnO films with increasing Si concentration was found to be due to the collective effects of high carrier concentration induced Burstein–Moss blue shift and bandgap narrowing. Efficient photoluminescence (PL) was observed at room temperature from these Si doped ZnO films. The bandgaps obtained from the PL measurements were found to be Stokes shifted as compared with those obtained from the transmission spectra. Si doping of ZnO offers the possibility of developing superior transparent conducting electrodes for applications such as in display panels, solar cells and transparent resistive non-volatile memories.