Measuring the junction temperature of III‐nitride light emitting diodes using electro‐luminescence shift

Abstract

Abstract The junction temperature rise of light emitting diodes due to self‐heating effects during operation of the LED is measured using the electro‐luminescence of the band‐to‐band recombination. This method is useful for the junction temperature monitoring of small geometry devices, indirectly. The junction temperature measured in InGaN/GaN multi‐quantum well LEDs with 1 mm 2 device size rises to 180 °C when the input current is 380 mA. The relationship between the junction temperature and the LED efficiency is clarified with experimental results. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)