Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n-GaN surface of thin-GaN light-emitting diodes

Abstract

By using a micron polystyrene ball array as a template, an Al oxide honeycomb structure was produced on the n-GaN surface of a thin-GaN light-emitting diode (LED). The Al oxide honeycomb structure consists of the networking hexagonal Al oxide nanowall. With the Al oxide honeycomb nanostructure, the total lighting output of thin-GaN LED was enhanced by 35%. The authors believe that the networking nanowall of the Al oxide honeycomb structure acted as a waveguide to extract the light emitted to the outer medium effectively.