The Inlaid Al₂O₃ Tunnel Switch for Ultrathin Ferroelectric Films

Abstract

Ferroelectric switching in ultrathin Al2O3/PZT bilayers is studied and used to modulate the applied electric field, allowing the development of novel applications of the combined dielectric tunnel switch/ferroelectric functional layer that can assist in the development of completely new types of electronic, electromechanical, and electrochemical devices. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.