Recombination-Enhanced Interactions between Point Defects and Dislocation Climb in Semiconductors

Abstract

The interaction between $〈100〉$ climb-induced dislocation networks and a naturally occurring deep level (the $\mathrm{DX}$ center) in ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ has been analyzed by scanning deeplevel transient spectroscopy. The concentration of $\mathrm{DX}$ centers was observed to decrease markedly in the vicinity of climb-induced $〈100〉$ networks, but remained nearly unchanged near glide-induced $〈110〉$ dislocation networks.