Japanese Journal of Applied Physics · 1985 · 17 citations · 12 references
Natural SciencesChemistryMaterials ScienceCondensed Matter PhysicsCrystal StructureSolid-state ChemistryCrystal ChemistryCrystal GrowthCrystalline MaterialsCrystallization AnalysisCrystallization ProcessesX-ray DiffractionCrystal Growth KineticsCrystal Growth MechanismsCrystallinityLattice ConstantsSingle-crystal GrowthX-ray Diffraction Analysis
The solution growth of CuGaS 2 single crystals using Te, Te-Cu and Te-Cu-S solutions has been studied. Crystallization from Te solution results in only small dark polycrystals. Large single crystals of CuGaS 2 are obtained when a prescribed amount of excess Cu is added to Te solution (Te-Cu solution). Furthermore, by adding both excess Cu and excess S to Te solution (Te-Cu-S solution) large single crystals of CuGa 2 . with good crystallinity are obtained. The crystal structure and lattice constants of the grown crystals are measured by RHEED and X-ray diffraction methods. Applying Vegard's law to the lattice constants, we estimate the concentration of Te incorporated in the crystals and find it to be extremely small. The crystallinity of the grown crystals is examined by photoluminescence.
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Electrical properties of CuGaS2 single crystals
Phil Won Yu, D. L. Downing, Y. S. Park · Journal of Applied Physics · 1974 · 80 citations
Epitaxial layers of CuInSe2 on GaAs
B. Schümann, Christoph Georgi, A. Tempel et al. · Thin Solid Films · 1978 · 77 citations