Preparation of (111)-Oriented β-Ta₂O₅ Thin Films by Chemical Vapor Deposition Using Metalorganic Precursors

Abstract

Tantalum pentaoxide thin films with orthorhombic structure have been grown on quartz and Si(100) substrates at 600∼700°C under reduced pressure of 5 Torr by metalorganic chemical vapor deposition. Ta(OC 2 H 5 ) 5 and Ta(DPM) 4 Cl were used as the source materials, and were compared with each other with respect to deposition behavior, crystal structure and orientation of Ta 2 O 5 films. When the Ta(DPM) 4 Cl precursor was used, fine (111)-oriented Ta 2 O 5 films were obtained on quartz and Si(100) substrates in a temperature range of 625∼675°C.