Quantum Goos-Hänchen Effect in Graphene

Abstract

The Goos-Hänchen (GH) effect is an interference effect on total internal reflection at an interface, resulting in a shift sigma of the reflected beam along the interface. We show that the GH effect at a p-n interface in graphene depends on the pseudospin (sublattice) degree of freedom of the massless Dirac fermions, and find a sign change of sigma at angle of incidence alpha=arcsin sqrt[sinalpha{c}] determined by the critical angle alpha{c} for total reflection. In an n-doped channel with p-doped boundaries the GH effect doubles the degeneracy of the lowest propagating mode, introducing a twofold degeneracy on top of the usual spin and valley degeneracies. This can be observed as a stepwise increase by 8e;{2}/h of the conductance with increasing channel width.