Be+ ion implantation in Ga0.96Al0.04Sb epitaxial layers

Abstract

Be ions are implanted into Te-doped Ga0.96Al0.04Sb layers grown by liquid-phase epitaxy. Be distribution is analyzed from secondary-ion mass spectrometry profiles and is found to be in good agreement with a computed simulation one. Hall-effect measurements show a complete electrical activity of the Be-implanted ions. Mesa devices are realized on the Ga0.96Al0.04Sb p+/Ga0.96Al0.04Sb n−/GaSb+ system: Be implantation leads to good quality junctions exhibiting homogeneous multiplication.