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Use of a diode laser to observe room-temperature, low-power optical bistability in a GaAs-AlGaAs etalon

37

Citations

8

References

1984

Year

Abstract

Optical bistability is observed using a single-mode diode laser in a GaAs-AlGaAs multiple-quantum-well etalon with as low as six mW power at 830 nm.

References

YearCitations

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