The application of the ion microprobe analyser to the measurement of the distribution of boron ions implanted into silicon crystals

Abstract

The distribution in depth of boron ions implanted into silicon crystals has been measured using the French `CAMECA' ion microprobe analyser. Two problems associated with the technique, namely the normalization of the curves and the appearance of a tail on the deeper side of the gaussian, have been studied. The technique provides a rapid and simple procedure for profiling, and determines values of projected range which show good agreement with other techniques.