High-stability oxygen sensor based on amorphous zinc tin oxide thin film transistor

Abstract

This research presents a sol-gel derived zinc tin oxide thin film transistor (TFT) as a high-stability oxygen sensor. Due to its high sensitivity, oxygen has been traditionally regarded as having a negative influence on the electrical characteristics of zinc-based TFTs; however, TFTs can also act as an oxygen sensor. After illumination with visible light in oxygen-rich ambient, a significant increase in drain current of nearly 104 times occurs with fixed gate and drain voltages. It is expected that an optimized method of illumination can help to reset the electrical characteristics or distinguish the on/off state of this reliable oxygen sensor.