Photopumped low threshold Al<i>x</i>″Ga1−<i>x</i>″As -Al<i>x</i>′Ga1−<i>x</i>′As-Al<i>x</i>Ga1−<i>x</i>As (<i>x</i>″∼0.85, <i>x</i>′∼0.3, <i>x</i>=0) single quantum well lasers

Abstract

Data are presented showing that it is possible to photopump and operate a quantum well heterostructure laser at equivalent current densities (Jeq) as low as 70 A/cm2. Continuous 300-K laser operation of a single 60-Å GaAs (x=0) quantum well in the center of a ∼0.12-μm-thick x′∼0.30 Alx′Ga1−x′As waveguide (and carrier reservoir), which is confined by x″∼0.85 Alx″Ga1−x″As layers, is demonstrated at Ieq∼0.4 mA (168 W/cm2, Jeq∼70 A/cm2). These quantum well heterostructures are grown by organometallic vapor phase epitaxy.