On the Carrier Concentration and Hall Mobility in GaN Epilayers

High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1992 · 387 citations

Engineering, Materials Engineering, Materials Science +15

Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer

Jinn‐Kong Sheu, J.M. Tsai, Shih‐Chang Shei et al. · IEEE Electron Device Letters · 2001 · 128 citations

Engineering, Electrical Engineering, Materials Science +17

GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals

Yan-Kuin Su, Yu-Zung Chiou, Fuh‐Shyang Juang et al. · Japanese Journal of Applied Physics · 2001 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching

Chin Hsiang Chen, Shoou‐Jinn Chang, Yan Su et al. · Japanese Journal of Applied Physics · 2001 · 44 citations

Engineering, Materials Engineering, Materials Science +17