Light emission of C60 embedded in porous silicon

Abstract

We have fabricated samples with C60 implanted into porous silicon with the ionized cluster beam deposition approach for improving the light emission of C60. We have obtained intense and well-resolved photoluminescence spectra under excitation of Ar+ laser (514.5 nm) at room temperature. The depth analysis of secondary ion mass spectroscopy showed that C60 had been incorporated into porous silicon. A large number of fine-structure peaks in the photoluminescence spectrum indicated the strong coupling of vibrational progressions with electronic states of C60 induced by the interaction between C60 molecule and nanometer-sized silicon particles.