Novel Resistance Switching Devices Based on Sub-10 nm Polymer Thin Film

Abstract

Resistive switching memory devices were fabricated using ultrathin (<10nnn) poly(o-anthranilic acid-co-aniline) films. When the devices were biased beyond a critical value with a current compliance of 10 mA, the devices suddenly switched front a high resistive state to a low resistive state (10 mA), with it difference in injection current of more than 4 orders of magnitude. Controlling the injection current level (by controlling the current compliance) allowed the high resistive state of the device to be restored. The devices possess it prolonged retention time of 3 x 10(3) s after switching. The conduction mechanism in the OFF-state implies that the resistive switching of the device call be explained in terms of filament theory.