Metalorganic Vapor Phase Epitaxy of CuGa(S_xSe_1-x)₂ Lattice-Matched to GaP (100)

Abstract

CuGa(S x Se 1- x ) 2 epitaxial layers were grown on GaP (100) substrates by metalorganic vapor phase epitaxy. The alloy composition of the grown layers was controlled by the transport rates of H 2 S and H 2 Se. A dramatic improvement in the crystalline quality of the CuGa(S x Se 1- x ) 2 layer lattice-matched to the substrate was evidenced by the narrow linewidth of the double-crystal X-ray rocking curve and the smooth surface. The lattice-matching conditions can be discussed in terms of crystal orientation, lattice parameter and thermal expansion coefficient.