Carbon nanotube field-effect transistor operation at microwave frequencies

Abstract

A top-gated carbon nanotube (CNT) field-effect transistor (FET) was fabricated on a quartz substrate. We used a novel measurement approach and demonstrated for the first time frequency-independent performance of a CNT FET for frequencies as high as 23GHz. This observed maximum operating frequency represents a significant breakthrough in the realization of carbon nanotube-based electronics for high frequency applications.