Observation of interface defects in strained InGaAs-GaAs by photoluminescence spectroscopy

Abstract

We have described a number of new, broad-linewidth emission bands in the photoluminescence spectrum of strained InGaAs-GaAs single-quantum wells. The variation of the luminescence intensity as a function of layer thickness and excitation intensity suggests that these bands are caused by interface defects, most likely misfit dislocations at the InGaAs/GaAs interface.