Stability study of laser irradiation of silicon diffused with arsenic

Abstract

The stability of a metastable state produced by laser irradiation on arsenic-diffused Si is studied by measurement of the sheet resistance as a function of postlaser heat treatment between 300 and 900 °C. The good conductivity produced by laser irradiation decays at as low as 400 °C within 1 h. This preempts the advantage of good conductivity produced by transient annealing and sets a severe restriction on the application of transient processing.