AIP Advances · 2013 · 28 citations · 33 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsThin FilmsInorganic SpectroscopyPhotoelectron SpectroscopySemiconductor NanomaterialsThin Film Optical PropertiesUltraviolet-visible SpectroscopyWide Band Gap SemiconductorsBand GapFermi LevelFilm ThicknessInterface FormationInverse Photoelectron SpectroscopyOptical Band GapSpectroscopic EllipsometryUltraviolet Photoelectron Spectroscopy
The interface formation between manganese phthalocyanine (MnPc) and cobalt was investigated combining ultraviolet photoelectron spectroscopy and inverse photoelectron spectroscopy. The transport band gap of the MnPc increases with the film thickness up to a value of (1.2 ± 0.3) eV while the optical band gap as determined from spectroscopic ellipsometry amounts to 0.5 eV. The gap values are smaller compared to other phthalocyanines due to metallic Mn 3d states close to the Fermi level. The transport band gap was found to open upon air exposure as a result of the disappearance of the occupied 3d electronic states.
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The work function of the elements and its periodicity
Herbert B. Michaelson · Journal of Applied Physics · 1977 · 4.2K citations
Charge-separation energy in films of π-conjugated organic molecules
Ian G. Hill, Antoine Kahn, Z. G. Soos et al. · Chemical Physics Letters · 2000 · 754 citations
Natural Sciences, Chemistry, Physics +14