Hydrogen implantation in silicon between 1.5 and 60 kev

Abstract

Abstract The use of the 1793 keV resonance of the 1H(11B, : alpha;)αα reaction and of the He+ channelled backscattering, allows us to determine various parameters about hydrogen implantation in silicon in the low energy range from 1.5 to 60 keV. We have determined the range profiles and the damage distribution of implanted protons. We have also measured the stopping power of protons (1.5–60 keV) and 11B ions (2 MeV) in silicon. Annealing of the implanted layer, blister formation and gas release have been investigated and it is shown that this method may be used to localize hydrogen in the silicon lattice.