Applied Physics Letters · 1996 · 239 citations · 0 references
Natural SciencesMaterials SciencePhysicsCeramic MaterialsMaterials PhysicsThin FilmsDielectric PropertiesDielectricsElectrical Properties Of CeramicsFerroelectric MaterialsThin Film AnnealingThin-film MaterialsAnnealing Temperature EffectsFerroelectric PropertiesFerroelectric Thin FilmsFerroelectricityPulsed Laser DepositionTemperature DependenceThin Film FerroelectricsThin-film Dielectrics
The effect of a postdeposition anneal on the structure and dielectric properties of epitaxial BaxSr1−xTiO3 (BST) thin films (x=0.35–0.65) have been measured. The films were grown by pulsed laser deposition on LaAlO3 (001) substrates. The films were single phase and (001) oriented with a lattice parameter larger than the bulk. The dielectric properties of the x=0.35 film exhibited a broad temperature dependence and a peak at 168 K, which is 36 K below the peak observed in bulk BST (x=0.35). Annealing films for 8 h in flowing oxygen at 900 °C caused the lattice parameter to decrease and dielectric properties to become more like the bulk. Annealing also resulted in an increased electric field dependent dielectric tuning without increased dielectric loss.