Pressureless Sintering of SiC

Abstract

Pressureless sintering of SiC was accomplished at 2100°C with oxide additives. These additives were the products of the reaction of Al(OH) 3 with HCl and of Y(OH) 3 with HCOOH. These reaction products were dissolved in water and mixed with submicrometer β‐SiC. A mixture of equal weights of these additives was effective for the sintering of SiC.