MIS solar cells with back surface fields

Abstract

Al-SiOx-pSi MIS solar cells have been fabricated on 10-Ω cm substrates both with and without back surface fields. The back-surface-field structure has been found to significantly enhance the open-circuit voltage of these cells, and Voc values in excess of 580 mV have been recorded at photocurrent densities of 300 A m−2. These results provide further evidence that MIS diodes can be produced in which the dark current is dominated by minority-carrier flows.