Gas Identification by a Single Gas Sensor using Porous Silicon as the Sensitive Material

Abstract

The peak frequency of the dielectric loss angle of gas molecules adsorbed in a porous silicon gas sensor having a 2.4 nm pore radius is found to vary inversely proportional to the third power of the gas molecular radius. Peak frequency is extremely sensitive to the pore radius, becoming about one order of magnitude higher for a pore radius of 1 nm. The temperature dependence of the peak frequency in the range of 0 to 25 °C was also determined.