A Global Growth Rate Model for Aluminum Nitride Sublimation

Abstract

A global model accounting for both the surface kinetics and transport in the vapor phase for AlN sublimation growth is described in this paper. The model parameters for the sticking coefficient of were identified from the experimental data. The refined model more accurately predicts the growth rate over a wider pressure range than the model considering transport only. Above 200 Torr the growth rate is determined by the transport, while below 100 Torr it is controlled by surface kinetics in the current temperature range (1700-1900°C). © 2001 The Electrochemical Society. All rights reserved.