Triple-Layer Rewritable Disc with Sb-Based Phase-Change Material

Abstract

We have been developing a triple-layer rewritable disc on the base of Blu-ray disc systems using a Mn–Sb–Te–Ge phase-change material and N /2 write strategy. The remarkable features of the Mn–Sb–Te–Ge phase-change material are the high crystallization speed and high thermal stability of amorphous marks. The N /2 write strategy can be set at a long cooling pulse period and can realize the formation of amorphous marks of sufficient size. As a result, a sufficient symbol error rate (SER) and a high read stability were achieved and we confirmed the feasibility of a triple-layer rewritable disc with 100 Gbyte and 72 Mbps recording rate.