Si nanowire metal–insulator–semiconductor photodetectors as efficient light harvesters

Abstract

Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of approximately 35% at a peak wavelength of 600 nm at zero external bias, and with an EQE of 70% at a peak wavelength of 800 nm at - 0.5 V bias. The NW device shows a flat and low reflectance and almost constant EQE up to a 60 degrees incident angle of illumination, demonstrating efficient visible-light harvesting by the Si NW antenna.