Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2 - Concepedia

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Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2

21

Citations

20

References

1994

Year

H. Hardtdegen, Chr. Ungermanns, K. Wirtz, D. Guggi, J. Herion, Hildegard Siekmann, H. Lüth

Journal of Crystal Growth

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringCarrier Gases N2Applied PhysicsHeavy CarbonMolecular Beam EpitaxyCompound Semiconductor

References

	Year	Citations

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