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Effect of transition-metal overlayers on the perpendicular magnetism of MBE-grown, ultra-thin Co films
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Citations
7
References
1993
Year
Magnetic PropertiesEngineeringTransition-metal OverlayersMagnetic MaterialsMagnetoresistanceTtm≊4 åSemiconductorsMagnetismMagnetic Data StorageQuantum MaterialsTtm≊100 åMagnetic Thin FilmsEpitaxial GrowthMaterials SciencePhysicsUltra-thin Co FilmsMagnetic MaterialPerpendicular Magnetic BehaviorFerromagnetismNatural SciencesSurface ScienceCondensed Matter PhysicsApplied PhysicsPerpendicular MagnetismMultilayer HeterostructuresThin FilmsMagnetic Property
We have used in situ polar Kerr ellipticity measurements to study the perpendicular magnetic behavior of MBE-grown Pd/Co/TM sandwich structures, where TM is the nonmagnetic transition metal overlayer Pd, Cu, or Ag. These structures are epitaxially deposited on thick Pd (111) buffer layers grown on Co-seeded GaAs (110) substrates. Hysteresis curves were measured in situ for systematically varied Co and TM layer thicknesses 2 Å≤tCo≤10 Å and 0 Å≤tTM≤200 Å. We observed perpendicular loops with a coercive field of Hc≤200 Oe for the uncovered Co films for tCo≤6 Å, becoming in-plane above this thickness. However, subsequent deposition of just one atomic layer (≊2 Å) of any of the TM over the Co resulted in strongly perpendicular, square hysteresis curves with Hc≥700 Oe for all films in the Co thickness range studied. Deposition of TM overlayers causes nonmonotonic behavior in Hc as a function of coverage. We find a peak in Hc at a TM coverage of tTM∼1.5 Å for all materials, with a subsequent monotonic increase above tTM≊4 Å to a limiting value by tTM≊100 Å. The peak is most pronounced for Cu, where Hc changes by more than 200%.
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