Journal of The Electrochemical Society · 2009 · 21 citations · 16 references
Optical MaterialsEngineeringBmn FilmsEnergy ConversionOrganic Solar CellTransparent CapacitorOptoelectronic DevicesThin Film Process TechnologyPhotovoltaic SystemPower CellAizo ElectrodesPhotovoltaicsElectric Power ProducedElectronic DevicesOptical PropertiesPulsed Laser DepositionThin Film ProcessingMaterials ScienceElectrical EngineeringSolar PowerEnergy StorageThick Aizo CapacitorsElectronic MaterialsFlexible ElectronicsApplied PhysicsBuilding-integrated PhotovoltaicsThin FilmsSolar CellsOptoelectronicsTransparent Solar CellsSolar Cell Materials
Transparent capacitors were prepared using BMN films grown from 25 to on AIZO/glass substrates (Corning 1737) by pulsed laser deposition. The BMN films grown at on the AIZO electrode exhibit a stable interface state between BMN and AIZO electrodes and the lowest root mean square roughness of 1 nm. The Pt/200 nm thick BMN/200 nm thick AIZO capacitors show dielectric constants of 50–68, dielectric losses of 2–3%, and leakage current densities of at 200 kV/cm in the range of growth temperatures. The AIZO/BMN/AIZO capacitors exhibit irregular variations in transmittance in the visible range and an optical transmittance of approximately 94% at a wavelength of 550 nm. Transparent AIZO/BMN/AIZO capacitors are possible candidates for integration with the transparent solar cells for the transparent system applications.
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