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Exciton binding energy in quantum-well wires
133
Citations
12
References
1987
Year
SemiconductorsQuantum ScienceWide-bandgap SemiconductorEngineeringQuantum ComputingPhysicsBinding EnergiesQuantum DeviceApplied PhysicsQuantum MaterialsCondensed Matter PhysicsQuantum DevicesQuantum-well WiresEffective-mass EquationCompound SemiconductorSemiconductor Nanostructures
The binding energies of excitons in quantum-well wires of GaAs surrounded by ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As are calculated with the use of variational solutions to the effective-mass equation. The results we obtained show that the energies are dramatically dependent on the sizes of the wire, and also that their magnitudes are greater than those in comparable quasi-two-dimensional quantum-well structures.
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