Nano Letters · 2010 · 220 citations · 31 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsSemiconductor MaterialsEpitaxial GrowthNanostructured Electronic MaterialsNanowiresSelf-assembled NanostructuresSemiconductor NanomaterialsSemiconductor PhysicsInterface-controlled GrowthMolecular Beam EpitaxyNanowire SynthesisNative Oxide LayersSemiconductor NanowiresSilicon NanowiresStructural Phase AnalysisStructural Phase Transitions
Au free GaAs nanowires with zinc blende structure, free of twin planes and with remarkable aspect ratios, have been grown on (111) Si substrates by molecular beam epitaxy. Nanowires with diameters down to 20 nm are obtained using a thin native oxide layer on the Si substrates. We discuss how the structural phase distribution along the wire length is controlled by the effective V/III ratio and temperature at the growth interface and explain how to obtain a pure twin plane free zinc blende structure.
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Thermal conductivity of individual silicon nanowires
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